Trench gate metal oxide semiconductor transistor

Details Trench gate metal oxide semiconductor transistor Trench gate metal oxide semiconductor transistor

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 21/336 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2007908

Abstract of the Disclosure A process for forming a trench gate metal-oxide semiconductor transistor, and the resulting structure are disclosed. The transistor is formed by forming a trench in the semiconductor substrate which is used to construct the gate region. Regions adjacent the upper surface of the trench are doped to form source and drain regions. A layer of insulator is applied along the surface of the trench and a conductive layer, forming the gate, is applied on the surface of the trench above the insulating layer. The source and drain regions are therefore separated by the trench and the gate region is separated from the source and drain regions by the insulating layer lining the trench surface.

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