Electromagnetic radiation sensor and method of manufacture

Details Electromagnetic radiation sensor and method of manufacture Electromagnetic radiation sensor and method of manufacture

H - Electricity

01

L

H01L 27/146 (2006.01)

Patent

CA 2748969

A method of forming a semiconductor sensor (100) includes providing a substrate, (102) forming a reflective layer (104) on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer (106) with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, (110) and removing the sacrificial layer.

La présente invention concerne un procédé de fabrication d'un capteur à semi-conducteur qui comprend, dans un mode de réalisation, les étapes qui consistent à fournir un substrat, à former une couche réfléchissante sur le substrat, à former une couche sacrificielle sur la couche réfléchissante, à former une couche d'absorbeur dont l'épaisseur est inférieure à environ 50 nm sur la couche sacrificielle, à former d'un seul tenant un absorbeur et au moins un pied de suspension dans la couche d'absorbeur, et à éliminer la couche sacrificielle.

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