G - Physics – 01 – N
Patent
G - Physics
01
N
G01N 27/90 (2006.01) H01L 43/00 (2006.01)
Patent
CA 2139265
A sensor has a coil formed on a silicon substrate through an insulating film by a micromachining technique, wherein the coil is formed by electrodeposition of a metal with a low resistivity, and its aspect ratio (h/d) as a ratio of a line thickness (h) to a line width (d) is at least one. The coil has a multilayered structure in the vertical direction and/or a core formed almost at the central position of the coil, thereby increasing an induc- tance.
G. Ronald Bell & Associates
Tokyo Gas Co. Ltd.
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