Oxide high-critical temperature superconductor acicular...

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 29/62 (2006.01) C30B 1/02 (2006.01) C30B 25/00 (2006.01) C30B 29/22 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2453922

The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10 (Bi--2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi--2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.

L'invention concerne un monocristal supraconducteur d'oxyde à température critique élevée présentant peu de défauts et apparaissant comme indispensable pour la réalisation d'un dispositif électronique à supraconduction. Ce cristal se présente notamment sous la forme d'un cristal aciculaire supraconducteur d'oxyde à température critique élevée constituant un cristal sensiblement parfait. L'invention concerne également un procédé de production de ce monocristal. Ledit cristal aciculaire présente une structure cristalline Bi2Sr2Ca2Cu3O10 (Bi-2223). Un comprimé constitué d'un oxyde présentant cette structure cristalline Bi-2223 contenant du TeO2, du CaO et du (SrCa)3TeO6 est produit par traitement thermique dans une atmosphère d'oxygène. Le cristal aciculaire de structure cristalline Bi-2223 peut contribuer au développement d'un dispositif électronique supraconducteur déjà conçu en théorie mais jamais encore développé.

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