H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/14 (2006.01)
Patent
CA 2052379
A superconducting device comprises a superconducting channel constituted of an oxide superconductor thin film formed on a substrate, a source electrode and a drain electrode formed at opposite ends of the superconducting channel so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode, and a gate electrode located on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is formed on an insulating layer formed on the superconducting channel, and the superconducting channel has a thickness of not greater than about five nanometers in a direction of an electric field created by the gate electrode. In addition, the superconducting channel, the source electrode and the drain electrode are formed of an a-axis oriented oxide superconductor thin film.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Bereskin & Parr
Sumitomo Electric Industries Ltd.
LandOfFree
Superconducting device having an extremely thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superconducting device having an extremely thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconducting device having an extremely thin... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1997892