Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

H - Electricity

01

L

H01L 29/43 (2006.01) H01L 29/41 (2006.01) H01L 29/45 (2006.01) H01L 29/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2458134

A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A join region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.

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