Enhanced light-emitting diode

Details Enhanced light-emitting diode Enhanced light-emitting diode

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2505805

A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a mufti layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

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