Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

Category

H - Electricity

Subcategory

01

Subsubcategory

L

IPC codes

H01L 29/812 (2006.01) H01L 21/338 (2006.01) H01L 21/8252 (2006.01) H01L 27/06 (2006.01)

Type

Patent

Patent number

CA 2098855

Description

ABSTRACT OF THE INVENTION At least two types of field effect transistors are integrated on a single substrate, which are selected from a type of field effect transistor having a channel of a pulse-doped layer and a threshold voltage defined by the thickness and the carrier concentration of the pulse- doped layer, a type of field effect transistor having a channel of a crystal layer ion-implanted and a threshold voltage defined by an amount of ion implantation into the crystal layer, and a type of field effect transistor having a channel of an ion-implanted region in the pulse- doped layer and a threshold voltage defined by the carrier concentration of the pulse-doped layer, the thickness of the pulse-doped layer, and an amount of ion implantation into the pulse-doped layer.

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