Surface stabilization of silicon rich silica glass using...

Details Surface stabilization of silicon rich silica glass using... Surface stabilization of silicon rich silica glass using...

H - Electricity

01

L

H01L 21/205 (2006.01) H01L 21/316 (2006.01) H01L 21/3105 (2006.01) H01L 21/314 (2006.01)

Patent

CA 2316548

A dielectric layer of silica glass by is formed plasma enhanced chemical vapour deposition (PECVD) wherein a gaseous precursor of the dielectric layer is supplied to a deposition chamber in the presence of an electromagnetic field. The supply of the gaseous precursor while continuing to maintain the electromagnetic field for a delay time exceeding 0.5 seconds after the discontinuation of the supply of the gaseous precursor. This improves the hydrophilic properties of said film. A siloxane-based SOG film is deposited on the dielectric layer.

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