G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/40 (2006.01) G11C 11/404 (2006.01) G11C 14/00 (2006.01) G11C 16/04 (2006.01) H01L 27/07 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1038496
DYNAMIC MEMORY WITH NON-VOLATILE BACK-UP MODE ABSTRACT A random access dynamic read-write FET memory system is provided with non-volatile storage of data in the event of a system power failure. The memory system includes an array of single device memory cells in which information is dynamically stored on a variable threshold non- volatile capacitor. A memory protect circuit detects system power supply failures and causes data volatively stored directly in the storage capacitor dielectric of each memory cell. Upon restoration of power, the non-volatively stored data is read from the array into a small auxiliary memory and the variable threshold storage capacitors are restored to their original state. Data is then returned to the memory cells in a dynamic mode.
239394
Chang Joseph J.
Kenyon Richard A.
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