Method of preparing semiconductor wafer with good intrinsic...

Details Method of preparing semiconductor wafer with good intrinsic... Method of preparing semiconductor wafer with good intrinsic...

H - Electricity

01

L

H01L 21/225 (2006.01) H01L 21/20 (2006.01) H01L 21/322 (2006.01)

Patent

CA 2064486

A method of preparing semiconductor wafers with intrinsic gettering capability, comprises the steps of: carrying out a high temperature oxidation in the on a doped semiconductor wafer for between about 20 to 60 minutes to form an initial oxidation layer; heating said wafer at a moderate temperature in an inert atmosphere for about 1 to 4 hours to initiate formation of crystal nuclei; ramping up the temperature in said inert atmosphere to a temperature of at least about 850°C at a rata of about 1 - 10°C/min.; and subsequently carrying out well diffusion on the wafer at a temperature of at least about 1000°C.

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