Semiconductor gas sensing

Details Semiconductor gas sensing Semiconductor gas sensing

G - Physics

01

N

G01N 33/00 (2006.01) G01N 27/12 (2006.01)

Patent

CA 2339951

The concentration of oxidising gases such as NO2, NO, Cl2, O3 in a gas mixture is determined by pertubing the operating conditions of a semiconductor gas sensor; the pertubation may be a temperature change or a change in concentration of the gas; the invention is particularly suited to ozone sensing with tungstic oxide sensors.

On détermine la concentration de gaz oxydants, tels que NO¿2?, NO, Cl¿2?, O¿3?, dans un mélange gazeux en perturbant les conditions de fonctionnement d'un détecteur de gaz à semiconducteur; cette perturbation pouvant être un changement de température ou un changement de la concentration de gaz. L'invention est particulièrement appropriée pour la détection de l'ozone au moyen de détecteurs à l'oxyde tungstique.

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