Mixer circuit using pulse-doped gaas mesfet

Details Mixer circuit using pulse-doped gaas mesfet Mixer circuit using pulse-doped gaas mesfet

H - Electricity

04

B

H04B 1/28 (2006.01) H03D 7/12 (2006.01)

Patent

CA 2086981

ABSTRACT OF THE DISCLOSURE A pulse-doped GaAs MESFET is employed as an active device of a mixer circuit. A gate bias point of the pulse- doped GaAs MESFET is set at the vicinity of a transition point of a transconductance-gate voltage characteristic from a portion in which the transconductance increases with the gate voltage to a portion in which the former does not vary with the latter. - 9 -

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