H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/3105 (2006.01) H01L 21/335 (2006.01) H01L 29/04 (2006.01) H01L 29/12 (2006.01) H01L 29/772 (2006.01)
Patent
CA 2740244
A silicon carbide semiconductor device (1) is provided that includes a semiconductor layer (12) made of silicon carbide and having a surface (12a) with a trench (20) having a sidewall (19) formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film (13) formed to contact the sidewall (19) of the trench (20). A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall (19) of the trench (20) and the insulating film (13) is not less than 1 x 10 21 cm -3, and the semiconductor device has a channel direction in a range of ~10° relative to the direction orthogonal to the <-2110> direction in the sidewall (19) of the trench (20). A method of manufacturing the silicon carbide semiconductor device is also provided.
Harada Shin
Honaga Misako
Marks & Clerk
Sumitomo Electric Industries Ltd.
LandOfFree
Silicon carbide semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon carbide semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2040927