Low temperature formation of backside ohmic contacts for...

Details Low temperature formation of backside ohmic contacts for... Low temperature formation of backside ohmic contacts for...

H - Electricity

01

L

H01L 21/04 (2006.01)

Patent

CA 2343416

The invention comprises a method for forming a metal-semiconductor ohmic contact (18) for use in a semiconductor device (10) having a plurality of epitaxial layers (14a-c) wherein the ohmic contact (18) is preferably formed after deposition of the epitaxial layers (14a-c). The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.

On décrit un procédé permettant de former un contact (18) ohmique métal-semiconducteur destiné à être utilisé dans un dispositif (10) à semiconducteurs comportant une pluralité de couches épitaxiales (14a-c) dans lequel le contact ohmique (18) este préférence formé après le dépôt des couches épitaxiales (14a-c). L'invention concerne également un dispositif à semiconducteurs comprenant une pluralité de couches épitaxiales et un contact ohmique.

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