Semiconductor laser producing visible light

Details Semiconductor laser producing visible light Semiconductor laser producing visible light

H - Electricity

01

S

H01S 5/323 (2006.01) H01S 5/223 (2006.01) H01S 5/22 (2006.01)

Patent

CA 2045069

A semiconductor laser producing visible light includes a first conductivity type GaAs substrate, a first conductivity type (AlwGa1-w)0.5In0.5P cladding layer disposed on the substrate a (AlzGa1-z)0.5In0.5P active layer disposed on the first conductivity type cladding layer wherein O ? z < w, a second conductivity type (AlwGa1-w)0.5In0.5P cladding layer having a lattice constant and disposed on the active layer, a first conductivity type In1-xGaxAs1-yPy current blocking layer disposed on part of the second conductivity type cladding layer wherein Y is approximately equal to -2x + 2, 0.5 ? x <1, and 0 < y ? 1 so that the lattice constant of the current blocking layer is substantially the same as the lattice constant of the second conductivity type cladding layer, a current concentration and collection structure in contact with the second conductivity type cladding layer for concentrating current flow in a central part of the active layer, and first and second electrodes disposed in contact with the substrate and the current concentration and collection structure, respectively.

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