High-density read-only data storage

Details High-density read-only data storage High-density read-only data storage

H - Electricity

01

L

H01L 27/112 (2006.01) G11C 17/08 (2006.01) G11C 17/12 (2006.01) H01L 21/8246 (2006.01)

Patent

CA 2117933

A read-only memory ("ROM") utilizing junction field-effect transistors ("JFETs") having a conductive channel orthogonally oriented with respect to the surface of the semiconductor material composing the JFET. A fixed-position ion beam is employed to create this narrow gate channel, which extends between the JFET's source and drain contact. Employing such JFETs as basic memory sites within a semiconductor ROM circuit allows for an architecture that conforms to a minimum lattice structure layout. In addition, the resulting ROM offers high speed access of data. Although JFETs have not been utilized as the transistor of choice within ROMs because of their seemingly inferior performance when compared to MOSFETs, the invention provides a novel architecture which significantly enhances the practicality of the JFET as a memory device.

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