Semiconductor device including shallow trench isolation...

Details Semiconductor device including shallow trench isolation... Semiconductor device including shallow trench isolation...

H - Electricity

01

L

H01L 21/8238 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2612213

A semiconductor device may include a semiconductor substrate and a plurality of shallow trench isolation (STI) regions in the substrate. More particularly, at least some of the STI regions may include divots therein. The semiconductor device may further include a respective superlattice between adjacent STI regions, and respective non-monocrystalline stringers in the divots.

Cette invention concerne un dispositif semi-conducteur pouvant comprendre un substrat semi-conducteur et une pluralité de régions d'isolation par tranchée peu profonde (STI) dans le substrat. Plus particulièrement, au moins certaines des régions STI peuvent comprendre des creux. Le dispositif semi-conducteur peut également comprendre un super-réseau correspondant entre des régions STI adjacentes, ainsi que des occlusions non monocristallines correspondantes dans les creux.

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