Electron lithography using photocathode

Details Electron lithography using photocathode Electron lithography using photocathode

G - Physics

03

F

G03F 7/20 (2006.01) H01J 37/317 (2006.01) H01L 21/027 (2006.01)

Patent

CA 2107451

Sub-micron pattern delineation, importantly in the fabrication of large scale integrated devices, is based on a patterned photocathode. Functionally, the photocathode plays the role of the mask in competing systems, either in proximity printing or in projection. In operation, the photocathode is illuminated by ultraviolet radiation to release electrons which are brought to focus on a resist-coated wafer with assistance of a uniform magnetic field together with an accelerating applied voltage.

L'invention est une méthode de délinéation de configurations sous-micrométriques, opération importante dans la fabrication des dispositifs intégrés à grande échelle, qui utilise une photocathode configurée. Cette photocathode a la même fonction que le masque dans les systèmes concurrents, qu'il s'agisse des systèmes à masquage en proximité ou des systèmes à projection. Elle est irradiée à l'ultraviolet pour libérer des électrons qui sont concentrés sur une plaquette recouverte de résine photosensible au moyen d'un champ magnétique uniforme et d'une tension accélératrice.

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