Nitride semiconductor substrate and method of producing same

Details Nitride semiconductor substrate and method of producing same Nitride semiconductor substrate and method of producing same

H - Electricity

01

L

H01L 29/30 (2006.01) C30B 29/38 (2006.01) H01L 21/02 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/221 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2480837

A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5nm and Rms200nm, which has a function of reducing dislocations of a GaN, InGaN or AIGaN layer epitaxially grown on the lapped substrate by gathering dislocations in the epi-layer to boundaries of holes, pulling the dislocations to bottoms of the holes. Higher roughness of the nitride substrate degrades morphology of an epitaxially-grown layer thereon but reduces dislocation density to a lower level. Morphology of the epi-layer contradicts the dislocation density of the epi-layer. The nitride semiconductor substrate can reduce dislocation density and can be low cost and useful substrates.

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