H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) H01L 21/312 (2006.01) H01L 51/30 (2006.01)
Patent
CA 2469912
A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3Ø In addition, an organic field effect device manufactured by the process is provided.
Procédé de fabrication d'un dispositif à effet de champ organique qui consiste (a) à déposer une couche semi-conductrice organique à partir d'une solution et (b) à déposer une couche de matière isolante à faible constante diélectrique à partir d'une solution, ladite couche formant au moins une partie d'un isolant de grille et la matière isolante à faible constante diélectrique étant en contact avec la couche semi-conductrice organique. La matière isolante à faible constante diélectrique possède une constante diélectrique allant de 1,1 à moins de 3,0. La présente invention concerne en outre un dispositif à effet de champ organique fabriqué selon ledit procédé.
Leeming Stephen William
Mohialdin-Khaffaf Soad
Ogier Simon Dominic
Veres Janos
Avecia Limited
Merck Patent Gmbh
Smart & Biggar
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