Semiconductor component

Details Semiconductor component Semiconductor component

H - Electricity

01

L

356/35

H01L 29/74 (2006.01) H01L 29/747 (2006.01) H01L 29/87 (2006.01)

Patent

CA 1164105

ABSTRACT OF THE DISCLOSURE A semiconductor component, which may be configured as a diac or triac or the like, has a semiconductor body comprising four layers of alter- nating conductivity type, in which an outer n-emitter carries a cathode, an outer p-emitter carries an anode, and two base layers are respectively adjacent and between the emitter layers. The anode and cathode respectively have terminals for an external circuit and a metal-insulator-semiconductor structure is disposed adjacent the n-emitter layer (p-emitter layer), the metal- insulator-semiconductor structure being provided with a gate electrode insul- ated from the boundary surface of the semiconductor body and representing a controllable emitter short circuit. A resistor is connected to the cathode (anode) and is connected in an external circuit in series with the cathode terminal (anode terminal). The gate electrode of the metal-insulator-semi- conductor structure is connected to that terminal of the resistor which is opposite to the terminal connected to the cathode (anode).

377519

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