H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/146
H01L 27/02 (2006.01) H01L 29/12 (2006.01) H01L 29/8605 (2006.01)
Patent
CA 1048659
SEMICONDUCTOR RESISTOR HAVING HIGH VALUE RESISTANCE Abstract of the Disclosure A semiconductor resistor structure for providing a high value resistance particularly adapted for space charge limited transistor applications, the resistor being fabricated in a semiconductor body having a resistivity in excess of 1 ohm cm., more preferably in semiconductor material that is nearly intrinsic. The resistor has two parallel elongated surface diffused regions in the body of an impurity similar to the back- ground impurity of the body and having a surface concentration sufficient to provide an ohmic contact, the boundaries of said surface diffused regions defined by the interface where the impurity concentration of the diffused region is ten percent more than the impurity concentration of the background impurity of the body. In a preferred embodiment, the surface diffused regions are spaced such that the boundaries intersect with each other, and ohmic contact terminals to each of the diffused regions.
247252
Magdo Ingrid E.
Magdo Steven
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