Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/172

H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1041674

Abstract To lower the resistance to current flow from, e.g., the base region to the base terminal lead, a channel of a conductivity type opposite to that of the base region, and of higher conductance, is disposed within the base region underlying the metal layer contact on the surface of the device. The metal layer contacts both the base region and the channel to electrically short the PN junction therebetween. -1-

244899

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