Method of forming an oxide layer on a silicon substrate

Details Method of forming an oxide layer on a silicon substrate Method of forming an oxide layer on a silicon substrate

B - Operations, Transporting

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117/123, 148/3.5

B05D 1/00 (2006.01) B05D 5/12 (2006.01) C30B 35/00 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1074630

ABSTRACT OF THE DISCLOSURE A method of forming a silicon dioxide film on a silicon substrate without causing a stacking fault, having the steps of flowing over a silicon substrate a gaseous mixture contain- ing oxygen and trichloroethylene, and heating the substrate to a temperature of about 1,050 to 1,200°C. -1-

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