Vmos/bipolar power switching device

Details Vmos/bipolar power switching device Vmos/bipolar power switching device

H - Electricity

01

L

356/128

H01L 29/06 (2006.01) H01L 27/07 (2006.01) H03K 17/567 (2006.01)

Patent

CA 1141867

ABSTRACT OF THE DISCLOSURE A relatively high power switching device is provided via the combination on a common substrate of a VMOS transistor having gate Region 35' for receiving a control signal, a drain Region 17, and a source Region 17; 19; individually connected to the collector 45 and base 17 Regions of a bipolar transistor, respectively, the collector-emitter current path of the latter being the main current carrying path of the switching device.

352287

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