Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

H - Electricity

01

L

356/30

H01L 21/70 (2006.01) H01L 21/033 (2006.01) H01L 21/22 (2006.01)

Patent

CA 1111146

Abstract of the disclosure A method of manufacturing a semiconductor device including a first and a second region of a low and a high impurity concen- tration located adjacent to each other, comprises the steps of forming the second heavily doped region of a second conductivity type in a semiconductor region of a low impurity concentration, doping a third impurity of a third conductivity type opposite to the second conductivity type in a region into which redis- tribution of that impurity located in the heavily doped region is expected. The concentration of the third impurity is selected so as to substantially compensate for the effect of the redis- tribution of the impurity of the second conductivity type and to leave the conductivity type and the effective impurity concen- tration of the adjacent region of the low impurity concentration in such conditions as desired. - 1 -

282953

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