H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/42, 356/58
H01L 29/40 (2006.01) H01L 29/06 (2006.01) H01L 29/872 (2006.01)
Patent
CA 1085060
ABSTRACT A semiconductor device having a high-voltage rectify- ing metal-to-semiconductor junction comprising a semiconductor body with a semiconductor layer of one conductivity type adjoin- ing a surface of the body and a metal layer extending in contact with a portion of the surface, this metal layer forming a rect- ifying junction with the layer of one conductivity type. A low resistance ohmic connection is provided to the layer of the one conductivity type and this layer comprises first and second sub-layers with the first sub-layer extending adjacent a sur- face of the body. The first sub-layer has a doping different from that of the second sub-layer on which it is present. A plurality of isolated discrete regions of opposite conductivity type are present in the vicinity of the boundary between the first and second sub-layers and these regions extend to below the surface portion contacted by the metal layer.
284093
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
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