Semiconductor device of the high frequency field effect...

Details Semiconductor device of the high frequency field effect... Semiconductor device of the high frequency field effect...

H - Electricity

01

L

356/126

H01L 29/76 (2006.01) H01L 29/12 (2006.01) H01L 29/43 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1158366

ABSTRACT OF THE DISCLOSURE The invention relates to high-speed semicon- ductor devices, whose control region has a junction between two different materials; the junction is formed between an n-doped AlxGa1-CAs layer and a p-doped GaAs layer in which appears a charge reversal layer for a zero polarization of AlXGa1-XAs. In addition, an insulating layer placed between the AlXGa1-XAs gate and its metal covering restricts the leakage current between the gate and the reversal layer. One application of the present invention is ultra-high frequency transistors and charge coupled devices.

363129

Affiliated with

Also associated with

Rating

Semiconductor device of the high frequency field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device of the high frequency field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device of the high frequency field effect... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-321822