H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/04 (2006.01)
Patent
CA 1141455
SILICON SOLAR CELL Abstract A high efficiency silicon solar cell may be constructed by pro- viding a two-stage emitter with a 1 micron thickness on a base region with a back surface field. The stage of the emitter adjacent to the junction is moderately doped to minimize bandgap shrinkage and to maximize carrier lifetime while the stage of the emitter adjacent the surface is highly doped to minimize sheet resistance. An aiding drift field may be added to both the emitter and base regions. The full size of the base is less than an effective diffusion length. A back surface field is provided adjacent the ohmic contact on the part of the base remote from the junction. YO978-013
340238
International Business Machines Corporation
Saunders Raymond H.
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