Semiconductor device having a hetero junction

Details Semiconductor device having a hetero junction Semiconductor device having a hetero junction

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Patent

CA 1075373

ABSTRACT OF THE DISCLOSURE A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain. -1-

251094

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