Reducing the switching time of semiconductor devices by...

Details Reducing the switching time of semiconductor devices by... Reducing the switching time of semiconductor devices by...

H - Electricity

01

L

356/62

H01L 21/265 (2006.01) H01L 21/263 (2006.01)

Patent

CA 1081863

REDUCING THE SWITCHING TIME OF SEMICONDUCTOR DEVICES BY NUCLEAR IRRADIATION ABSTRACT OF THE DISCLOSURE A method of reducing the switching time of certain semiconductor devices and particularly gain- operated semiconductor devices. The depth of maximum defect generation in a given type of semiconductor devices having a block PN junction is determined on irradiation with a given radiation source emitting particles with molecular weight of at least one (1), preferably protons or alpha particles; and the energy level of the radiation source adjusted to provide the depth of maximum defect generation adjacent a blocking PN junction of the type of semiconductor device. At least one semiconductor device of said given type of semiconductor device is positioned with a major surface thereof to be exposed to the adjusted radiation source, and thereafter irradiated with the adjusted radiation source to a given dosage level to reduce the switching time of the semi- conductor device. Preferably, the semiconductor device is positioned and the energy level of the radiation source adjusted to irradiate through the major surface of the device closer the higher impurity region adjoining the blocking PN junction, and to provide the maximum defect generation in said higher impurity region adjoining the blocking PN junction but spaced from the PN junction beyond a depletion region formed at the PN junction on application of a specified blocking voltage across the PN junction of the semiconductor device. -1-

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