Method of producing a semiconductor photodiode of indium...

Details Method of producing a semiconductor photodiode of indium... Method of producing a semiconductor photodiode of indium...

H - Electricity

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H01L 31/18 (2006.01) H01L 21/20 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1081835

TITLE - A Method of Producing a Semiconductor Photodiode of Indium Antimonide, and Device Thereof. ABSTRACT OF THE DISCLOSURE A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, utilizing conventional vapor phase or liquid phase epitaxial techniques, wherein the antimony in the epitaxial layer is partially replaced by either arsenic or phosphorus, thus resulting in a high performing photoelectric device.

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