Silicon on sapphire mos transistor

Details Silicon on sapphire mos transistor Silicon on sapphire mos transistor

H - Electricity

01

L

356/149

H01L 27/12 (2006.01) H01L 29/34 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1053381

ABSTRACT OF THE DISCLOSURE An MOS transistor constructed using silicon on sapphire technology in which the channel region can be elec- trically connected either to the source or drain terminal is disclosed. The transistor is advantageous in that the shift of the threshold voltage of the transistor in the presence of radiation is substantially decreased. Connecting the channel region of the transistor to the source terminal also substantially reduces what is normally referred to as the "kink" effect in MOS transistors utilizing floating substrate channel regions. Reducing the sensitivity to radiation and the kink effect results in a transistor having improved electrical characteristics.

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