Deposition of solid semiconductor compositions and novel...

Details Deposition of solid semiconductor compositions and novel... Deposition of solid semiconductor compositions and novel...

C - Chemistry, Metallurgy

30

B

204/96.07, 148/2

C30B 35/00 (2006.01) C23C 14/00 (2006.01) C30B 23/02 (2006.01) H01L 21/203 (2006.01) H01L 21/363 (2006.01) H01L 29/04 (2006.01) H01L 29/161 (2006.01) H01L 29/201 (2006.01) H01L 29/221 (2006.01) H01L 29/26 (2006.01)

Patent

CA 1036470

DEPOSITION OF SOLID COMPOSITIONS AND NOVEL SEMICONDUCTOR MATERIALS ABSTRACT OF THE DISCLOSURE Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semicon- ductor materials. The method may be used to make novel metastable compositions such as (GaAs)1-xSix, (GaAs)1-x Gex, (InSb)1-xSix, (InSb)1-xGex, (InAs)1-xSix, and (InAs)1-xGex (where x is a number greater than about 0.01, and x + (1-x) = 1, and GaxAsySiz, GaxAsyGez, InxSbySiz, InxSbyGez, InxAsySiz, InxAsyGe and InxSbyAs (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).

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