Method of making a silicon nitride part

Details Method of making a silicon nitride part Method of making a silicon nitride part

C - Chemistry, Metallurgy

04

B

25/133, 117/103.

C04B 35/58 (2006.01) C04B 35/593 (2006.01)

Patent

CA 1094892

ABSTRACT OF THE DISCLOSURE A method of making a silicon nitride part is disclosed. In this method an article of silicon nitride is first made which has a density less than the theoretical density of silicon nitride. This article also contains a densification aid. The entire surface area of this article is coated with a thin silicon nitride skin which is gas impervious. The so coated article is heated to a tempera- ture for a time sufficient so that some of the densification aid may diffuse into the silicon nitride skin. The so treated article is then subjected to a pressure sufficiently high, for a time sufficiently long and at a temperature which permits the silicon nitride article and skin thereon to be compacted to increase the density of the article to a density greater than it originally had and to form the silicon nitride skin about the article so that the skin becomes an intergral of the finished part.

294581

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