Ion implanted bubble propagation structure

Details Ion implanted bubble propagation structure Ion implanted bubble propagation structure

G - Physics

11

C

356/199, 352/37.

G11C 11/14 (2006.01) G11C 19/08 (2006.01) H01F 10/24 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1068830

ION IMPLANTED BUBBLE PROPAGATION STRUCTURE Abstract of the Disclosure An improved ion implanted propagation structure for movement of magnetic bubble domains in a storage medium which comprises an additional magnetic layer capable of ion implantation in combination with a bubble domain storage layer in which the bubble domains exist and are moved by the ion implanted layer in response to the reorientation of a magnetic field in the plane of the ion implanted layer. The ion implanted layer (drive layer) can be in intimate contact with the storage layer and exchange coupled thereto, or can be separated from the storage layer by a non-magnetic spacer. The ion implanted layer can comprise different geometry propagation elements and its thickness, 4.pi.M, and other magnetic properties are generally selected to provide flux matching of a charged wall in the ion implanted layer with the flux emanating from the bubble domains to be moved. The charged wall is coupled to the bubble domain by exchange coupling and/or magnetostatic coupling.

268718

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