Epitaxial manufacture of a semiconductor device having a...

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Patent

CA 1134060

1.8.1979 PHF 78.556 ABSTRACT: A method of manufacturing, on a substrate of a binary compound, layers of ternary or quaternary compounds in which epitaxial intermediate layers separate the substrate from the end layer, characterized in that the relative increase of the dimensions of the crystal lattices in the successive epitaxial intermediate layers increases.

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