H - Electricity – 01 – L
Patent
H - Electricity
01
L
352/82.4
H01L 29/76 (2006.01) G11C 11/35 (2006.01) G11C 11/404 (2006.01) H01L 27/11 (2006.01)
Patent
CA 1124858
ABSTRACT OF THE DISCLOSURE A storage element comprises a storage capacitor which has a storage electrode, arranged insulated over a doped semiconductor layer, connected to a constant voltage, and a selection element which manifest a gate connected to a word line, arranged in an insulated manner above the semiconductor layer. A source zone connected to a bit line is oppositely doped and arranged at the surface of the semiconductor layer. The selection element selectively connects the source zone to a surface storage region of the semiconductor layer which is disposed beneath the storage electrode. Between the storage electrode and the semiconductor layer an insulated electrode is provided and the semiconductor layer is additionally p-doped and n-doped in a zone beneath a portion, adjacent the selection element, of the electrode and an overflow electrode and an oppositely doped drain zone are provided on the side of the electrode opposite the selection element.
308358
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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