Storage element

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

CPC

352/82.4

IPC codes

H01L 29/76 (2006.01) G11C 11/35 (2006.01) G11C 11/404 (2006.01) H01L 27/11 (2006.01)

Type

Patent

Patent number

CA 1124858

Description

ABSTRACT OF THE DISCLOSURE A storage element comprises a storage capacitor which has a storage electrode, arranged insulated over a doped semiconductor layer, connected to a constant voltage, and a selection element which manifest a gate connected to a word line, arranged in an insulated manner above the semiconductor layer. A source zone connected to a bit line is oppositely doped and arranged at the surface of the semiconductor layer. The selection element selectively connects the source zone to a surface storage region of the semiconductor layer which is disposed beneath the storage electrode. Between the storage electrode and the semiconductor layer an insulated electrode is provided and the semiconductor layer is additionally p-doped and n-doped in a zone beneath a portion, adjacent the selection element, of the electrode and an overflow electrode and an oppositely doped drain zone are provided on the side of the electrode opposite the selection element.

Application Number

308358

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Storage element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Storage element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-528073

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.