Reference voltage generator device

Details Reference voltage generator device Reference voltage generator device

H - Electricity

01

L

356/149

H01L 21/22 (2006.01)

Patent

CA 1154880

REFERENCE VOLTAGE GENERATOR DEVICE Abstract of the Disclosure The method is for manufacturing a semiconductor device with at least a pair of insulated gate field-effect trans- istors having semiconductor gate electrodes of different conductivity types. An impurity of one conductivity type is introduced into a portion of a semiconductor layer where a first gate electrode of one conductivity type is to be formed, and then an impurity of the opposite conductivity type is introduced into all of the semiconductor layer with a density lower than that of the impurity of the first conductivity type so that a second gate electrode of the opposite conductivity type is formed at another portion of the semiconductor layer. The method has the advantage of enabling manufacture of an improved semiconductor device without increasing the number of fabrication steps.

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