Strip buried heterostructure laser

Details Strip buried heterostructure laser Strip buried heterostructure laser

H - Electricity

05

B

345/32

H05B 33/00 (2006.01)

Patent

CA 1126374

- 1 - Abstract of the Disclosure A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss wavesuide layer and contiguous therewith a narrower bandgap active layer in the form of a narrow strip which extends along the longitudinal (resonator) axis of the laser. Suitable lateral current confinement means, such as reversed biased p-n junctions, are provided to constrain pumping current to flow in a narrow channel through the active layer. Lasers of this type exhibit relatively high pulsed power outputs (e.g., 400 mW), linear L-I characteristics, stable fundamental transverse mode and single longitudinal mode oscillation. In another embodiment the surfaces of the waveguide layer adjacent the active layer are provided with distributed feedback gratings. Also described are techniques for shaping the active layer without the introduction of debilitating defects therein, as well as procedures for LPE growth on Al-containing Group III-V compound layers which are exposed to processing in the ambient. SCAN, R.A. 31-3

384605

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