Method of manufacturing a semiconductor device and device...

Details Method of manufacturing a semiconductor device and device... Method of manufacturing a semiconductor device and device...

H - Electricity

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356/165, 356/30

H01L 21/225 (2006.01) H01L 21/033 (2006.01) H01L 21/26 (2006.01) H01L 21/762 (2006.01) H01L 21/8228 (2006.01) H01L 27/04 (2006.01) H01L 27/082 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1093700

PHN 8742 11.11.1977 ABSTRACT: A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit having very small complementary transistors. According to the invention two surface zones are provided beside each other without a masking tolerance of which one is formed by diffusion from a thin silicon layer. The distance between the surface zones is determined by the width of an oxide strip formed on the surface and on the edge of the silicon layer. The oxide strip is obtained by an underetching process and by using a silicon nitride mask deposited with shadow effect. - 24 -

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