Semiconductor surface passivation films containing a12o3

Details Semiconductor surface passivation films containing a12o3 Semiconductor surface passivation films containing a12o3

H - Electricity

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117/158, 356/171

H01L 29/06 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1042560

COATING FOR PASSIVATING A SEMICONDUCTOR DEVICE ABSTRACT OF THE DISCLOSURE A semiconductor device is described having a body of silicon semiconductor material containing at least one PN junction therein, which PN junction terminates at a peripheral edge surface of the body. A double-layer passivating and protective coating is applied to the edge of the body covering the portion where the PN junction emerges. The inner layer consists of SiO2 and a predetermined percentage of Al2O3. The outer layer consists of SiO2 and a predetermined percentage of Al2O3 which exceeds the percentage of Al2O3 in the inner layer.

239217

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