H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/125, 356/162
H01L 21/31 (2006.01) H01L 21/762 (2006.01) H01L 21/8228 (2006.01) H01L 27/08 (2006.01) H01L 27/082 (2006.01) H01L 27/092 (2006.01) H01L 29/72 (2006.01)
Patent
CA 1154174
ABSTRACT OF THE DISCLOSURE A semiconductor device is provided with semiconductor elements having complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape. The surfaces of the frustum are inclined at an angle determined by semiconductor crystal structure. The side and bottom surfaces of the islands are formed adjacent to an insulating layer and both islands are supported apart from the polycrystalline semiconductor layer. All side and bottom surfaces of the islands adjacent the insulating layer are made of high impurity substance of the same type as respective islands.
360222
Kato Kotaro
Sakurai Tetsuma
Macrae & Co.
Nippon Telegraph & Telephone Public Corporation
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