Method for producing pressed contact power semiconductors

Details Method for producing pressed contact power semiconductors Method for producing pressed contact power semiconductors

H - Electricity

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H05K 5/02 (2006.01) H01L 21/285 (2006.01) H01L 23/051 (2006.01) H01L 23/48 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H05K 7/02 (2006.01)

Patent

CA 1078528

PRECIS DE LA DIVULGATION L'invention concerne un procédé de fabrication de semiconducteurs de puissance à contacts pressés. Les métallisations de contact les plus épaisses sont formées par application d'une couche métallique par sérigraphie sur une première couche métallique mince déposée par évaporation sous vide. Application à la réalisation de dispositifs de puissance à structure interdigitée.

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