Method of producing a dielectric with perowskite structure

Details Method of producing a dielectric with perowskite structure Method of producing a dielectric with perowskite structure

H - Electricity

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H01B 3/10 (2006.01) C04B 35/465 (2006.01) C04B 35/468 (2006.01) C04B 35/49 (2006.01) H01G 4/12 (2006.01)

Patent

CA 1098303

ABSTRACT: By adding compounds which form in the temperature range of 1000 to 1250°C the eutectics Cu0.Cu20 or Cu0.Cu20 MeIV02 to materials having a perowskite structure results in a reduction of the sintering temperature of the perowskite ceramic to 1050 to 1185°C. For the perowskite ceramic the relevant materials are alkaline earth titanates, -zirconates, -stannates and mixed crystals thereof; MeIV02 represents the oxides of the elements of group IV of the periodic system of elements. -22-

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