Amorphous silicon mis device

Details Amorphous silicon mis device Amorphous silicon mis device

H - Electricity

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H01L 45/00 (2006.01) H01L 21/306 (2006.01) H01L 21/316 (2006.01) H01L 29/16 (2006.01) H01L 29/47 (2006.01) H01L 31/0392 (2006.01) H01L 31/062 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1154177

ABSTRACT OF THE DISCLOSURE The present invention relates to an amorphous silicon MIS device having an insulating oxide formed by the chemical oxidation of the silicon surface. A process comprising etching the silicon surface followed by a treat- ment of the etched surface in a sulfur based oxidant forms a controlled thickness oxide layer, useful in modifying the junction forming characteristics of the semiconductor and additionally stabilizing the semiconductor properties of the photoconductive amorphous silicon.

365559

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