Semiconductor rectifier

Details Semiconductor rectifier Semiconductor rectifier

H - Electricity

01

L

356/42

H01L 29/40 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1049661

ABSTRACT OF THE DISCLOSURE When semiconductor rectifiers are subject to surge loads in the blocking direction, transit time oscillations may occur with a frequency of several 100 MHz, which can lead to the destruction of the rectifier in the case of power losses which should not in them- selves be sufficient to cause destruction. By the installation of finely distributed regions of the opposite conductivity type into the highly doped outer cathode zone, it is possible to greatly attenuate such oscillations. Higher power losses are thus attained.

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