Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

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H01L 21/18 (2006.01) H01L 21/00 (2006.01) H01L 21/225 (2006.01) H01L 21/285 (2006.01) H01L 21/316 (2006.01) H01L 21/768 (2006.01) H01L 21/8222 (2006.01)

Patent

CA 1050667

ABSTRACT OF THE DISCLOSURE A method of manufacturing semiconductor devices comprising (a) form- ing a base region on a semiconductor substrate surface (b) forming an emitter electrode window and a base electrode on an insulating film covering the semi- conductor substrate surface (c) forming a polycrystal semiconductor layer over the entire area of said insulating film including said windows (d) form- ing an emitter region by introducing impurity into the substrate through said polycrystal semiconductor layer (e) forming an electrode metal layer over the entire part of said polycrystal semiconductor layer, and (f) leaving said electrode metal layer and polycrystal semiconductor layer in the form of wiring.

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