Semiconductor device

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H - Electricity

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H01L 29/00 (2006.01) H01L 21/00 (2006.01) H01L 21/761 (2006.01) H01L 27/00 (2006.01) H01L 27/07 (2006.01) H01L 27/082 (2006.01) H01L 29/08 (2006.01) H01L 29/72 (2006.01) H01L 29/74 (2006.01) H01L 29/747 (2006.01)

Patent

CA 1056068

ABSTRACT OF THE DISCLOSURE A semiconductor device having a high emitter-grounded current gain which includes an emitter region with the minority carrier diffusion length greater than its width and an additional region adjacent to the emitter region with the minority carrier diffusion length of this additional region greater than its width. The surface recombina- tion velocity of the additional region is small. The minority carrier current injected from the additional region into the emitter balances that injected from the base into the emitter. -1-

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